All MOS low-power low-voltage LDO with an embedded voltage reference

• المؤلف الرئيسي: Chor, Chee Yong
• مؤلفون آخرون: Siek Liter
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/64618

A low dropout (LDO) voltage regulator with embedded voltage reference (EVR) where all MOSFETs are biased in weak inversion (sub-threshold region) except the pass transistor, generating a mean regulated voltage of 620.3 mV at full load (10 mA) under 1.2-V supply voltage, has been designed and simulat...