All MOS low-power low-voltage LDO with an embedded voltage reference

A low dropout (LDO) voltage regulator with embedded voltage reference (EVR) where all MOSFETs are biased in weak inversion (sub-threshold region) except the pass transistor, generating a mean regulated voltage of 620.3 mV at full load (10 mA) under 1.2-V supply voltage, has been designed and simulat...

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書目詳細資料
主要作者: Chor, Chee Yong
其他作者: Siek Liter
格式: Final Year Project
語言:English
出版: 2015
主題:
在線閱讀:http://hdl.handle.net/10356/64618
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機構: Nanyang Technological University
語言: English