Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

• Main Author: Tham, Wai Hoe
• Other Authors: Lakshimi Kanta Bera
• Format: Theses and Dissertations
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/67970
• Institution: Nanyang Technological University

“Moore’s Law” states that the number of transistors in an integrated circuit will double approximately every two years. True to this observation, the number of transistors per Si IC indeed has doubled every 18 months since the 1970s. In accordance with the scaling trend predicted in Moore’s Law, not...