Studies of gallium nitride high electron mobility transistors

• Main Author: Goh, Basil Yan Kun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Final Year Project
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/67994
• Institution: Nanyang Technological University

Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that possesses many unique properties, which pushes semiconductor device performances to newer limits. This has been attracting attention in both the engineering field and the commercial semiconductor industry. With the ability to achieve very high cut-off frequency, low noise figure and high power output density performance in fabricated devices, GaN is set to be one of the most advanced semiconductor materials for a wide spectrum of existing and new applications. With its unique highly polarization induced 2-Dimensional electron gas (2DEG), GaN-based High Electron Mobility Transistors (HEMTs) have been a focus in recent studies, aimed at improving and developing better fabrication techniques of devices for different appliances requiring highly linear power amplification or high temperature operations. Currently, many breakthroughs have been made in these areas, given the material’s considerably high dislocation density. It is already reported that integration of GaN on high resistivity Silicon (Si) substrate has achieved significant results - a step closer to materializing commercial large scaled fabrication of GaN HEMTs. In this report, GaN HEMTs will be introduced and areas of integration of GaN-on-Si will be looked into, namely the effects of fabrication conditions (low temperature annealing) as well as materials deposited along the process (non-gold). The report also includes an analysis of GaN technology as a whole, focusing on its compatibility with Complementary Metal-Oxide Semiconductor (CMOS) fabrication technology. Various samples fabricated under different conditions will be analyzed on their effects on the device performance.