Studies of gallium nitride high electron mobility transistors

• Main Author: Goh, Basil Yan Kun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Final Year Project
• Language: English
• Published: 2016
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/67994
• Institution: Nanyang Technological University

Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that possesses many unique properties, which pushes semiconductor device performances to newer limits. This has been attracting attention in both the engineering field and the commercial semiconductor industry. With the abili...