Modelling of gallium nitride half-bridge converter

• المؤلف الرئيسي: Yeo, Howe Li
• مؤلفون آخرون: Ali Iftekhar Maswood
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2018
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/73163

Gallium nitride high electron mobility transistors (GaN HEMTs) have been commonly cited to significantly improve the efficiency and power density of power electronic converters like battery chargers, laptop adapters and motor drives. The potential for size reduction was proven during the Google litt...