Modelling of gallium nitride half-bridge converter
Gallium nitride high electron mobility transistors (GaN HEMTs) have been commonly cited to significantly improve the efficiency and power density of power electronic converters like battery chargers, laptop adapters and motor drives. The potential for size reduction was proven during the Google litt...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/10356/73163 |
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| Institution: | Nanyang Technological University |
| Language: | English |
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