Studies of gallium nitride high electron mobility transistors

• المؤلف الرئيسي: Goh, Basil Yan Kun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2016
• الموضوعات: DRNTU::Engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/67994

Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that possesses many unique properties, which pushes semiconductor device performances to newer limits. This has been attracting attention in both the engineering field and the commercial semiconductor industry. With the abili...