Electrical and structural characterization of GaN-based transistor structures

Abstract There are primarily two parts to this project. The first part consists of understanding High Electron Mobility Transistors (HEMT), Two Dimensional Electron Gas (2DEG), and Gallium Nitride properties. In the second part, Hall Effect Measurement, Atomic Force Microscopy (AFM) and Four Point...

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Main Author: Loo, Nicholas Yujun
Other Authors: K Radhakrishnan
Format: Final Year Project
Language:English
Published: 2016
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Online Access:http://hdl.handle.net/10356/69191
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-691912023-07-07T16:35:02Z Electrical and structural characterization of GaN-based transistor structures Loo, Nicholas Yujun K Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering Abstract There are primarily two parts to this project. The first part consists of understanding High Electron Mobility Transistors (HEMT), Two Dimensional Electron Gas (2DEG), and Gallium Nitride properties. In the second part, Hall Effect Measurement, Atomic Force Microscopy (AFM) and Four Point Probe measurements and analysis are described in order to better understand the electrical properties of the AlGaN or GaN based samples. The second part is the experiment to observe the device’s resistance value under the presence of different gases and at different temperature. In order to proceed with this part, training has been done on the Gas Sensor Characterisation System. The gases used for this portion of the project are Carbon Dioxide (CO2), Nitrogen Dioxide (NO2) and Ammonia gas (NH3). After testing with the gases, we found that the sample device does not react to carbon dioxide at room temperature. However, the device undergoes changes in resistance value when exposed to ammonia and nitrogen dioxide at room temperature. At 100 oC, the device was found to react to all three gases. The device is then placed under ammonia gas and studied on its behaviour when exposed to high temperature. The device was found to have similar behaviour from 100 oC to 500 oC (albeit at different resistance value) and erratic behaviour at 600 oC. More experimentation should be conducted to uncover the results obtained from the 600 oC test. Bachelor of Engineering 2016-11-22T00:53:31Z 2016-11-22T00:53:31Z 2016 Final Year Project (FYP) http://hdl.handle.net/10356/69191 en Nanyang Technological University 48 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Loo, Nicholas Yujun
Electrical and structural characterization of GaN-based transistor structures
description Abstract There are primarily two parts to this project. The first part consists of understanding High Electron Mobility Transistors (HEMT), Two Dimensional Electron Gas (2DEG), and Gallium Nitride properties. In the second part, Hall Effect Measurement, Atomic Force Microscopy (AFM) and Four Point Probe measurements and analysis are described in order to better understand the electrical properties of the AlGaN or GaN based samples. The second part is the experiment to observe the device’s resistance value under the presence of different gases and at different temperature. In order to proceed with this part, training has been done on the Gas Sensor Characterisation System. The gases used for this portion of the project are Carbon Dioxide (CO2), Nitrogen Dioxide (NO2) and Ammonia gas (NH3). After testing with the gases, we found that the sample device does not react to carbon dioxide at room temperature. However, the device undergoes changes in resistance value when exposed to ammonia and nitrogen dioxide at room temperature. At 100 oC, the device was found to react to all three gases. The device is then placed under ammonia gas and studied on its behaviour when exposed to high temperature. The device was found to have similar behaviour from 100 oC to 500 oC (albeit at different resistance value) and erratic behaviour at 600 oC. More experimentation should be conducted to uncover the results obtained from the 600 oC test.
author2 K Radhakrishnan
author_facet K Radhakrishnan
Loo, Nicholas Yujun
format Final Year Project
author Loo, Nicholas Yujun
author_sort Loo, Nicholas Yujun
title Electrical and structural characterization of GaN-based transistor structures
title_short Electrical and structural characterization of GaN-based transistor structures
title_full Electrical and structural characterization of GaN-based transistor structures
title_fullStr Electrical and structural characterization of GaN-based transistor structures
title_full_unstemmed Electrical and structural characterization of GaN-based transistor structures
title_sort electrical and structural characterization of gan-based transistor structures
publishDate 2016
url http://hdl.handle.net/10356/69191
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