Electrical and structural characterization of GaN-based transistor structures

• المؤلف الرئيسي: Loo, Nicholas Yujun
• مؤلفون آخرون: K Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2016
• الموضوعات: DRNTU::Engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/69191
• المؤسسة: Nanyang Technological University

Abstract There are primarily two parts to this project. The first part consists of understanding High Electron Mobility Transistors (HEMT), Two Dimensional Electron Gas (2DEG), and Gallium Nitride properties. In the second part, Hall Effect Measurement, Atomic Force Microscopy (AFM) and Four Point...