Electrical and structural characterization of GaN-based transistor structures

• 主要作者: Loo, Nicholas Yujun
• 其他作者: K Radhakrishnan
• 格式: Final Year Project
• 語言: English
• 出版: 2016
• 主題: DRNTU::Engineering
• 在線閱讀: http://hdl.handle.net/10356/69191

Abstract There are primarily two parts to this project. The first part consists of understanding High Electron Mobility Transistors (HEMT), Two Dimensional Electron Gas (2DEG), and Gallium Nitride properties. In the second part, Hall Effect Measurement, Atomic Force Microscopy (AFM) and Four Point...