Ordered boron nitride thin film growth with reactive magnetron sputtering

Boron Nitride thin films were deposited on pieces of diced Si wafer using High-power Impulse Magnetron Sputtering (HIPIMS) with a pure boron target. The growth parameters of N2 gas flow ratio and substrate temperature were varied. The thin films were characterised using Fourier Transform Infrared sp...

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Main Author: Loh, Li Quan
Other Authors: Teo Hang Tong Edwin
Format: Final Year Project
Language:English
Published: 2017
Subjects:
Online Access:http://hdl.handle.net/10356/70626
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-706262023-03-04T15:34:39Z Ordered boron nitride thin film growth with reactive magnetron sputtering Loh, Li Quan Teo Hang Tong Edwin School of Materials Science and Engineering DRNTU::Engineering::Materials Boron Nitride thin films were deposited on pieces of diced Si wafer using High-power Impulse Magnetron Sputtering (HIPIMS) with a pure boron target. The growth parameters of N2 gas flow ratio and substrate temperature were varied. The thin films were characterised using Fourier Transform Infrared spectroscopy (FTIR) to obtain the extent of vertical ordering of h-BN, indicated by the peak ratio R780/1380, and the cubic content, calculated by the ratio of the peak intensities, acBN. From our results, to obtain BN thin films of high thermal conductivities, the optimum N2 gas flow ratio could be 50%. When the N2 gas flow ratio was 25%, the optimum substrate temperature could be 600C. Moreover, the extent of vertical ordering remained low for all substrate temperatures when the N2 gas flow ratio was 25%. Detailed study can be undertaken on BN thin films growth using HIPIMS with a pure boron target to develop better processes to obtain BN thin films of superior properties. Bachelor of Engineering (Materials Engineering) 2017-05-05T06:44:19Z 2017-05-05T06:44:19Z 2017 Final Year Project (FYP) http://hdl.handle.net/10356/70626 en Nanyang Technological University 29 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Loh, Li Quan
Ordered boron nitride thin film growth with reactive magnetron sputtering
description Boron Nitride thin films were deposited on pieces of diced Si wafer using High-power Impulse Magnetron Sputtering (HIPIMS) with a pure boron target. The growth parameters of N2 gas flow ratio and substrate temperature were varied. The thin films were characterised using Fourier Transform Infrared spectroscopy (FTIR) to obtain the extent of vertical ordering of h-BN, indicated by the peak ratio R780/1380, and the cubic content, calculated by the ratio of the peak intensities, acBN. From our results, to obtain BN thin films of high thermal conductivities, the optimum N2 gas flow ratio could be 50%. When the N2 gas flow ratio was 25%, the optimum substrate temperature could be 600C. Moreover, the extent of vertical ordering remained low for all substrate temperatures when the N2 gas flow ratio was 25%. Detailed study can be undertaken on BN thin films growth using HIPIMS with a pure boron target to develop better processes to obtain BN thin films of superior properties.
author2 Teo Hang Tong Edwin
author_facet Teo Hang Tong Edwin
Loh, Li Quan
format Final Year Project
author Loh, Li Quan
author_sort Loh, Li Quan
title Ordered boron nitride thin film growth with reactive magnetron sputtering
title_short Ordered boron nitride thin film growth with reactive magnetron sputtering
title_full Ordered boron nitride thin film growth with reactive magnetron sputtering
title_fullStr Ordered boron nitride thin film growth with reactive magnetron sputtering
title_full_unstemmed Ordered boron nitride thin film growth with reactive magnetron sputtering
title_sort ordered boron nitride thin film growth with reactive magnetron sputtering
publishDate 2017
url http://hdl.handle.net/10356/70626
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