Ordered boron nitride thin film growth with reactive magnetron sputtering
Boron Nitride thin films were deposited on pieces of diced Si wafer using High-power Impulse Magnetron Sputtering (HIPIMS) with a pure boron target. The growth parameters of N2 gas flow ratio and substrate temperature were varied. The thin films were characterised using Fourier Transform Infrared sp...
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| 格式: | Final Year Project |
| 語言: | English |
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2017
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| 在線閱讀: | http://hdl.handle.net/10356/70626 |
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