Germanium-on-insulator for group IV laser and III-V integration on silicon

• Main Author: Bao, Shuyu
• Other Authors: Tan Chuan Seng
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2018
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: http://hdl.handle.net/10356/73379
• Institution: Nanyang Technological University

Germanium (Ge) laser on Ge-on-insulator (GOI) shows great promises as the light source in photonic integrated circuits (PICs) for future data communication and sensing applications. In addition, small lattice mismatch between GaAs and Ge also enables hybrid integration of III-V photonics on silicon...