Germanium-on-insulator for group IV laser and III-V integration on silicon
Germanium (Ge) laser on Ge-on-insulator (GOI) shows great promises as the light source in photonic integrated circuits (PICs) for future data communication and sensing applications. In addition, small lattice mismatch between GaAs and Ge also enables hybrid integration of III-V photonics on silicon...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2018
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| Online Access: | http://hdl.handle.net/10356/73379 |
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| Institution: | Nanyang Technological University |
| Language: | English |