Innovative application and driving of enhancement mode gallium nitride power transistors

• Main Author: Cai, Aaron Qingwei
• Other Authors: Siek Liter
• Format: Theses and Dissertations
• Language: English
• Published: 2018
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• Online Access: http://hdl.handle.net/10356/73923
• Institution: Nanyang Technological University

Wide-bandgap semiconductors like Gallium Nitride (GaN) are enabling higher efficiency and greater power density in power electronics. The objective of this work is to develop novel gate drive methods and applications for the proliferation of Enhancement mode (E-mode) GaN power transistors. The chall...