Experimental study of AlGaN/GaN HEMT based devicesfor gas sensing applications

• المؤلف الرئيسي: Jahan, Fina
• مؤلفون آخرون: K. Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2018
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/76366

In recent times, gas sensing applications have seen an increased demand in both manufacturing industries and research studies. This project aims to study high electron mobility transistors (HEMT) and their abilities, as well as the properties of two dimensional electron gas (2DEG) and III nitrides,...