Deposition of antimony on wafer by using sputtering system

Antimony thin film is first deposited on the substrate by using the newly set-up sputtering system in Nanoelectronics Lab 1 (NEL1) through sputter deposition process. A thorough study on the newly set-up sputtering system has been done. By varying the deposition duration, we can manipulate the thick...

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Bibliographic Details
Main Author:	Kam, Shu Xia
Other Authors:	Tay Beng Kang
Format:	Final Year Project
Language:	English
Published:	2019
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	http://hdl.handle.net/10356/77912
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Institution:	Nanyang Technological University
Language:	English

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record_format	dspace
spelling	sg-ntu-dr.10356-779122023-07-07T15:56:35Z Deposition of antimony on wafer by using sputtering system Kam, Shu Xia Tay Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Antimony thin film is first deposited on the substrate by using the newly set-up sputtering system in Nanoelectronics Lab 1 (NEL1) through sputter deposition process. A thorough study on the newly set-up sputtering system has been done. By varying the deposition duration, we can manipulate the thickness of the thin film deposited on the substrate. By varying the substrate temperature and power used for sputtering will also change the properties of the thin film. Raman spectroscopy is used to determine the structure and property of thin film deposited on the substrate while AFM is used to determine the surface morphology and thickness of the thin film formed. A field effect transistor (FET) device is fabricated based on the thin film and an electrical testing is carried out to investigate the device characteristic of the thin film. Bachelor of Engineering (Electrical and Electronic Engineering) 2019-06-07T14:07:54Z 2019-06-07T14:07:54Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/77912 en Nanyang Technological University 40 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Kam, Shu Xia Deposition of antimony on wafer by using sputtering system
description	Antimony thin film is first deposited on the substrate by using the newly set-up sputtering system in Nanoelectronics Lab 1 (NEL1) through sputter deposition process. A thorough study on the newly set-up sputtering system has been done. By varying the deposition duration, we can manipulate the thickness of the thin film deposited on the substrate. By varying the substrate temperature and power used for sputtering will also change the properties of the thin film. Raman spectroscopy is used to determine the structure and property of thin film deposited on the substrate while AFM is used to determine the surface morphology and thickness of the thin film formed. A field effect transistor (FET) device is fabricated based on the thin film and an electrical testing is carried out to investigate the device characteristic of the thin film.
author2	Tay Beng Kang
author_facet	Tay Beng Kang Kam, Shu Xia
format	Final Year Project
author	Kam, Shu Xia
author_sort	Kam, Shu Xia
title	Deposition of antimony on wafer by using sputtering system
title_short	Deposition of antimony on wafer by using sputtering system
title_full	Deposition of antimony on wafer by using sputtering system
title_fullStr	Deposition of antimony on wafer by using sputtering system
title_full_unstemmed	Deposition of antimony on wafer by using sputtering system
title_sort	deposition of antimony on wafer by using sputtering system
publishDate	2019
url	http://hdl.handle.net/10356/77912
_version_	1772828269389807616

Deposition of antimony on wafer by using sputtering system

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