Choice of generation volume models for electron beam induced current computation
The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or interaction volume. The generation volume affects the electron beam-induced current (EBIC) profile. This effect of the generation volume on the EBIC profile is particula...
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Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/79317 http://hdl.handle.net/10220/6305 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | The spatial distribution of the electron-hole pairs
generated by the electron beam is commonly called the generation
volume or interaction volume. The generation volume affects the
electron beam-induced current (EBIC) profile. This effect of the
generation volume on the EBIC profile is particularly true for
regions near to the semiconductor junctions. Mathematical models
have been proposed for use in the computation of EBIC profiles.
Three pear-shaped generation volume distributions were analyzed
by comparing the resulting EBIC profiles to the profile obtained
from the data using theMonte Carlo simulations. The result shows
that the Bonard model gives an EBIC profile that is closest to
the one computed using the Monte Carlo simulation. This result
is easily observed in the first and the second derivatives of the
semilogarithmic EBIC profiles. |
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