Choice of generation volume models for electron beam induced current computation

• Main Authors: Ong, Vincent K. S., Kurniawan, Oka.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/79317; http://hdl.handle.net/10220/6305
• Institution: Nanyang Technological University

The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or interaction volume. The generation volume affects the electron beam-induced current (EBIC) profile. This effect of the generation volume on the EBIC profile is particula...