Choice of generation volume models for electron beam induced current computation

• Main Authors: Ong, Vincent K. S., Kurniawan, Oka.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: https://hdl.handle.net/10356/79317; http://hdl.handle.net/10220/6305

The spatial distribution of the electron-hole pairs generated by the electron beam is commonly called the generation volume or interaction volume. The generation volume affects the electron beam-induced current (EBIC) profile. This effect of the generation volume on the EBIC profile is particula...