Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes
A comparative study of the I –V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I –V characteristics were observed for some of the diodes which were silicided with pure Ni at 700 °C while good I –V ch...
Saved in:
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/79897 http://hdl.handle.net/10220/8105 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-79897 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-798972023-07-14T15:57:03Z Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes Mangelinck, D. Lahiri, S. K. Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials A comparative study of the I –V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I –V characteristics were observed for some of the diodes which were silicided with pure Ni at 700 °C while good I –V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I –V characteristics is dominated by electron diffusion in the p+ region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p1 region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi. Published version 2012-05-18T08:05:29Z 2019-12-06T13:36:18Z 2012-05-18T08:05:29Z 2019-12-06T13:36:18Z 2001 2001 Journal Article Chi, D. Z., Mangelick, D., Lahiri, S. K., Lee, P. S., & Pey, K. L. (2001). Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes. Applied Physics Letters, 78(21), 3256-3258. https://hdl.handle.net/10356/79897 http://hdl.handle.net/10220/8105 10.1063/1.1374496 en Applied physics letters © 2001 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official URL: http://dx.doi.org/10.1063/1.1374496. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
spellingShingle |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Mangelinck, D. Lahiri, S. K. Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes |
description |
A comparative study of the I –V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I –V characteristics were observed for some of the diodes which were silicided with pure Ni at 700 °C while good I –V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I –V characteristics is dominated by electron diffusion in the p+ region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p1 region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi. |
author2 |
School of Materials Science & Engineering |
author_facet |
School of Materials Science & Engineering Mangelinck, D. Lahiri, S. K. Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong |
format |
Article |
author |
Mangelinck, D. Lahiri, S. K. Chi, Dong Zhi Lee, Pooi See Pey, Kin Leong |
author_sort |
Mangelinck, D. |
title |
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes |
title_short |
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes |
title_full |
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes |
title_fullStr |
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes |
title_full_unstemmed |
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes |
title_sort |
comparative study of current-voltage characteristics of ni and ni(pt)- alloy silicided p+/n diodes |
publishDate |
2012 |
url |
https://hdl.handle.net/10356/79897 http://hdl.handle.net/10220/8105 |
_version_ |
1773551270924124160 |