Titanium self-aligned silicide process fabrication issues for deep sub-micron CMOS devices

by Lahiri, S.K., Lim, C.W., Chan, L.
Published 2016

Correlation between intermetallic thickness and roughness during solder reflow

by Zuruzi, A.S., Lahiri, S.K., Burman, P., Siow, K.S.
Published 2014

Formation and stability of Ni(Pt) silicide on(100)Si and (111)Si

by Mangelinck, D., Dai, J.Y., Lahiri, S.K., Ho, C.S., Osipowicz, T.
Published 2014

Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes

by Mangelinck, D., Lahiri, S. K., Chi, Dong Zhi, Lee, Pooi See, Pey, Kin Leong
Published 2012

Comparative study of current-voltage characteristics of Ni and Ni(Pt)-alloy suicided p+/n diodes

by Chi, D.Z., Mangelinck, D., Lahiri, S.K., Lee, P.S., Pey, K.L.
Published 2016

Integrity of copper-tantalum nitride metallization under different ambient conditions

by Yap, K.P., Gong, H., Dai, J.Y., Osipowicz, T., Chan, L.H., Lahiri, S.K.
Published 2014

Nickel-platinum alloy monosilicidation-induced defects in n-type silicon

by Chi, D.Z., Mangelinck, D., Dai, J.Y., Lahiri, S.K., Pey, K.L., Ho, C.S.
Published 2014

Study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications

by Lim, C.W., Bourdillon, A.J., Gong, H., Lahiri, S.K., Pey, K.L., Lee, K.H.
Published 2014

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

by Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T.
Published 2014

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

by Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Voyles, P.M., Muller, D.A., Bude, M., Lin, W.H., See, A., Loomans, M.E., Lahiri, S.K., Räisänen, P.I.
Published 2014