Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface

Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam (EB) treatment was investigated by four-point bending test, x-ray photoe...

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Bibliographic Details
Main Authors: Damayanti, M., Prasad, K., Chen, Zhe, Zhang, Sam, Jiang, Ning, Gan, Zhenghao, Chen, Zhong, Mhaisalkar, Subodh Gautam
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/79990
http://hdl.handle.net/10220/7697
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Institution: Nanyang Technological University
Language: English
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Summary:Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam (EB) treatment was investigated by four-point bending test, x-ray photoelectron spectroscopy, and density functional theory. Higher adhesion energy (Gc) was achieved with low-dose EB treatment, attributed to the strong Ta-arene interaction. However, high-dose EB breaks the aromatic rings partially, resulting in fewer available sites for Ta-arene bonding, leading to lower adhesion. It is suggested that the amount of carbon atoms involved in bonding with the metal is the key to improve the Ta/polymer adhesion.