Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array
This work presents the effects of in situ thermal annealing under antimony overpressure on the structural, electrical, and optical properties of III-Sb (GaSb and InSb) grown on (100) GaAs using an interfacial misfit array to accommodate the lattice mismatch. Both the sample growth and the in situ th...
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sg-ntu-dr.10356-806422020-03-07T13:57:23Z Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt School of Electrical and Electronic Engineering Molecular Beam Epitaxy Compound Semiconductor Engineering::Electrical and electronic engineering This work presents the effects of in situ thermal annealing under antimony overpressure on the structural, electrical, and optical properties of III-Sb (GaSb and InSb) grown on (100) GaAs using an interfacial misfit array to accommodate the lattice mismatch. Both the sample growth and the in situ thermal annealing were carried out in the in the molecular beam epitaxy system, and the temperature of the as-grown sample was increased to exceed its growth temperature during the annealing. X-ray diffraction demonstrates nearly fully relaxed as-grown and annealed III-Sb layers. The optimal annealing temperatures and durations are for 590 °C, 5 min for GaSb and 420 °C, 15 min for InSb, respectively. In situ annealing decreased the surface roughness of the III-Sb layers. X-ray reciprocal space mapping and transmission electron microscopy observation showed stable interfacial misfit arrays, and no interfacial diffusion occurred in the annealed III-Sb layers. A Hall measurement of unintentionally doped III-Sb layers showed greater carrier mobility and a lower carrier concentration in the annealed samples at both 77 and 300 K. In situ annealing improved the photoresponsivity of GaSb and InSb photoconductors grown on GaAs in the near- and mid-infrared ranges, respectively. NRF (Natl Research Foundation, S’pore) Accepted version 2019-10-01T08:22:16Z 2019-12-06T13:53:46Z 2019-10-01T08:22:16Z 2019-12-06T13:53:46Z 2017 Journal Article Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array. Applied Surface Science, 427 Part B, 876-883. doi:10.1016/j.apsusc.2017.09.081 0169-4332 https://hdl.handle.net/10356/80642 http://hdl.handle.net/10220/50069 10.1016/j.apsusc.2017.09.081 en Applied Surface Science © 2017 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V. 19 p. application/pdf |
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Molecular Beam Epitaxy Compound Semiconductor Engineering::Electrical and electronic engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array |
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This work presents the effects of in situ thermal annealing under antimony overpressure on the structural, electrical, and optical properties of III-Sb (GaSb and InSb) grown on (100) GaAs using an interfacial misfit array to accommodate the lattice mismatch. Both the sample growth and the in situ thermal annealing were carried out in the in the molecular beam epitaxy system, and the temperature of the as-grown sample was increased to exceed its growth temperature during the annealing. X-ray diffraction demonstrates nearly fully relaxed as-grown and annealed III-Sb layers. The optimal annealing temperatures and durations are for 590 °C, 5 min for GaSb and 420 °C, 15 min for InSb, respectively. In situ annealing decreased the surface roughness of the III-Sb layers. X-ray reciprocal space mapping and transmission electron microscopy observation showed stable interfacial misfit arrays, and no interfacial diffusion occurred in the annealed III-Sb layers. A Hall measurement of unintentionally doped III-Sb layers showed greater carrier mobility and a lower carrier concentration in the annealed samples at both 77 and 300 K. In situ annealing improved the photoresponsivity of GaSb and InSb photoconductors grown on GaAs in the near- and mid-infrared ranges, respectively. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
format |
Article |
author |
Jia, Bo Wen Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt |
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Jia, Bo Wen |
title |
Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array |
title_short |
Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array |
title_full |
Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array |
title_fullStr |
Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array |
title_full_unstemmed |
Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array |
title_sort |
effect of in situ annealing on the structural and electrical properties and infrared photodetection of iii-sb on gaas using interfacial misfit array |
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2019 |
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https://hdl.handle.net/10356/80642 http://hdl.handle.net/10220/50069 |
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1681044480023592960 |