Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO2 gate stack

Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO2 gate stack

The authors show that the TiN/HfO2/SiOx gate stack, formed via multistep deposition cum two-step anneal [comprising a room-temperature ultraviolet ozone (RTUVO) anneal and a subsequent rapid thermal anneal (RTA) at 420 °C], exhibits more superior electrical characteristics as compared to the gate st...

Full description

Saved in:
Bibliographic Details
Main Authors: Yew, Kwang Sing, Ang, Diing Shenp, Tang, Lei Jun, Pan, Jisheng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
Chemical bonds
Online Access:https://hdl.handle.net/10356/81294
http://hdl.handle.net/10220/39217
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/81294
http://hdl.handle.net/10220/39217

Similar Items