Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO2 gate stack
The authors show that the TiN/HfO2/SiOx gate stack, formed via multistep deposition cum two-step anneal [comprising a room-temperature ultraviolet ozone (RTUVO) anneal and a subsequent rapid thermal anneal (RTA) at 420 °C], exhibits more superior electrical characteristics as compared to the gate st...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/81294 http://hdl.handle.net/10220/39217 |
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| Institution: | Nanyang Technological University |
| Language: | English |