Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO2 gate stack

• المؤلفون الرئيسيون: Yew, Kwang Sing, Ang, Diing Shenp, Tang, Lei Jun, Pan, Jisheng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: Chemical bonds
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81294; http://hdl.handle.net/10220/39217

The authors show that the TiN/HfO2/SiOx gate stack, formed via multistep deposition cum two-step anneal [comprising a room-temperature ultraviolet ozone (RTUVO) anneal and a subsequent rapid thermal anneal (RTA) at 420 °C], exhibits more superior electrical characteristics as compared to the gate st...