GeSn-on-insulator substrate formed by direct wafer bonding

• المؤلفون الرئيسيون: Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Elemental semiconductors; Germanium
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81989; http://hdl.handle.net/10220/41088

GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge 1- xSnx layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO2 on Ge 1- xSnx, the bonding of the donor wafer to a second Si (00...