A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs

• المؤلفون الرئيسيون: Dutta, Pradipta, Syamal, Binit, Koley, Kalyan, Mohankumar, N., Sarkar, C. K.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: MOSFET devices; Drain current
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82922; http://hdl.handle.net/10220/40361

In this paper, we have presented a surface potential based drain current and threshold voltage model for surrounding gate MOSFETs that is valid for all doping concentrations. The Newton Raphson iterative technique is implemented for calculation of the potential at the surface and center of the chann...