Signature of magnetization in Xe ions implanted ZnO : correlation with oxygen defects as probed by photoelectron spectroscopy

Signature of magnetization in Xe ions implanted ZnO : correlation with oxygen defects as probed by photoelectron spectroscopy

300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9 × 1015, 8.1 × 1015 and 1.1 × 1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has bee...

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Bibliographic Details
Main Authors: Chatterjee, Ratnamala, Kanjilal, D., Mishra, D. K., Pattanaik, Shreenu, Dash, S., Sharma, Manoj Kumar, Kumar, Pravin, Ray, Sekhar C.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Implantation
Magnetism
Engineering::Materials
Online Access:https://hdl.handle.net/10356/83062
http://hdl.handle.net/10220/49112
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/83062
http://hdl.handle.net/10220/49112

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