Signature of magnetization in Xe ions implanted ZnO : correlation with oxygen defects as probed by photoelectron spectroscopy
300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9 × 1015, 8.1 × 1015 and 1.1 × 1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has bee...
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Main Authors: | Chatterjee, Ratnamala, Kanjilal, D., Mishra, D. K., Pattanaik, Shreenu, Dash, S., Sharma, Manoj Kumar, Kumar, Pravin, Ray, Sekhar C. |
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Other Authors: | School of Materials Science & Engineering |
Format: | Article |
Language: | English |
Published: |
2019
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/83062 http://hdl.handle.net/10220/49112 |
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Institution: | Nanyang Technological University |
Language: | English |
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