Signature of magnetization in Xe ions implanted ZnO : correlation with oxygen defects as probed by photoelectron spectroscopy

• Main Authors: Chatterjee, Ratnamala, Kanjilal, D., Mishra, D. K., Pattanaik, Shreenu, Dash, S., Sharma, Manoj Kumar, Kumar, Pravin, Ray, Sekhar C.
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2019
• 主題: Implantation; Magnetism; Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/83062; http://hdl.handle.net/10220/49112

300 keV Xe ions were implanted in single crystals of ZnO at room temperature with three fluences viz. 4.9 × 1015, 8.1 × 1015 and 1.1 × 1016 ions/cm2. The Xe ion implanted ZnO samples were characterized by UV-Vis spectroscopy, X-ray photo-electron spectroscopy (XPS) and SQUID magnetometer. It has bee...