0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

• Main Authors: Do, Anh Tuan, Lee, Zhao Chuan, Wang, Bo, Chang, Ik-Joon, Liu, Xin, Kim, Tony Tae-Hyoung
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2016
• 主題: Sensors; SRAM cells
• 在線閱讀: https://hdl.handle.net/10356/84030; http://hdl.handle.net/10220/41563

In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to ‘1’ or ‘0’. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same col...