0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to ‘1’ or ‘0’. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same col...

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書目詳細資料
Main Authors:	Do, Anh Tuan, Lee, Zhao Chuan, Wang, Bo, Chang, Ik-Joon, Liu, Xin, Kim, Tony Tae-Hyoung
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2016
主題:	Sensors SRAM cells
在線閱讀:	https://hdl.handle.net/10356/84030 http://hdl.handle.net/10220/41563
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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