0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization

In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to ‘1’ or ‘0’. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same col...

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Bibliographic Details
Main Authors: Do, Anh Tuan, Lee, Zhao Chuan, Wang, Bo, Chang, Ik-Joon, Liu, Xin, Kim, Tony Tae-Hyoung
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/84030
http://hdl.handle.net/10220/41563
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Institution: Nanyang Technological University
Language: English

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