Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of the most promising candidates for next-generation non-volatile memory. STT-MRAM was seen as a potential candidate to replace complementary metal oxide semiconductor (CMOS)-based memory in the field of...
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| 格式: | Student Research Poster |
| 語言: | English |
| 出版: |
2016
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| 在線閱讀: | https://hdl.handle.net/10356/84141 http://hdl.handle.net/10220/41618 |
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| 機構: | Nanyang Technological University |
| 語言: | English |