Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch
The narrow read-window of most complementary resistive switches proposed to-date poses a significant challenge to array level implementation, as inherent variations in the set and reset voltages result in an unacceptably small read margin. In this work, we present the asymmetrical ITO/HfOx/TiN compl...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/84160 http://hdl.handle.net/10220/43569 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The narrow read-window of most complementary resistive switches proposed to-date poses a significant challenge to array level implementation, as inherent variations in the set and reset voltages result in an unacceptably small read margin. In this work, we present the asymmetrical ITO/HfOx/TiN complementary resistive switch, with a significantly enlarged positive read window of 1.6 V as compared to the much narrower window of 0.5 V of the symmetrical TiN/HfOx/TiN switch. A read margin of 1.1 V is obtained after accounting for statistical variations, representing a significant improvement over the 0.1 V margin of the symmetrical counterpart. Analyses show that the enlarged read window may be ascribed to two important attributes: (1) the stronger affinity of ITO for oxygen, which leads to a reduced positive set voltage and (2) a larger work function of the ITO, resulting in an increase in the positive reset voltage. |
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