Enlarged read window in the asymmetric ITO/HfOx/TiN complementary resistive switch

• Main Authors: Zhang, H. Z., Ang, Diing Shenp, Zhou, Yu, Wang, Xin Peng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Metalloids; Dielectrics
• Online Access: https://hdl.handle.net/10356/84160; http://hdl.handle.net/10220/43569
• Institution: Nanyang Technological University

The narrow read-window of most complementary resistive switches proposed to-date poses a significant challenge to array level implementation, as inherent variations in the set and reset voltages result in an unacceptably small read margin. In this work, we present the asymmetrical ITO/HfOx/TiN compl...