Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure in...
محفوظ في:
المؤلفون الرئيسيون: | , , , , , , , |
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مؤلفون آخرون: | |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2013
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الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/84793 http://hdl.handle.net/10220/13475 |
الوسوم: |
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المؤسسة: | Nanyang Technological University |
اللغة: | English |
الملخص: | Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient α from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient α at low fields. The more readily ionizing hole coefficient β remains very similar to prior work. |
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