Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure in...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/84793 http://hdl.handle.net/10220/13475 |
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Institution: | Nanyang Technological University |
Language: | English |
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