Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement

Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure in...

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Main Authors: Green, James E., Loh, Wei Sun., Marshall, Andrew R. J., Ng, Beng Koon, Tozer, Richard C., David, John P. R., Soloviev, Stanislav I., Sandvik, Peter M.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/84793
http://hdl.handle.net/10220/13475
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-847932020-03-07T13:57:29Z Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement Green, James E. Loh, Wei Sun. Marshall, Andrew R. J. Ng, Beng Koon Tozer, Richard C. David, John P. R. Soloviev, Stanislav I. Sandvik, Peter M. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient α from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient α at low fields. The more readily ionizing hole coefficient β remains very similar to prior work. 2013-09-16T06:10:41Z 2019-12-06T15:51:13Z 2013-09-16T06:10:41Z 2019-12-06T15:51:13Z 2012 2012 Journal Article Green, J. E., Loh, W. S., Marshall, A. R. J., Ng, B. K., Tozer, R. C., David, J. P. R., et al. (2012). Impact Ionization Coefficients In 4H-SiC By Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices, 59(4), 1030-1036. 0018-9383 https://hdl.handle.net/10356/84793 http://hdl.handle.net/10220/13475 10.1109/TED.2012.2185499 en IEEE transactions on electron devices © 2012 IEEE
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Green, James E.
Loh, Wei Sun.
Marshall, Andrew R. J.
Ng, Beng Koon
Tozer, Richard C.
David, John P. R.
Soloviev, Stanislav I.
Sandvik, Peter M.
Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
description Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient α from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient α at low fields. The more readily ionizing hole coefficient β remains very similar to prior work.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Green, James E.
Loh, Wei Sun.
Marshall, Andrew R. J.
Ng, Beng Koon
Tozer, Richard C.
David, John P. R.
Soloviev, Stanislav I.
Sandvik, Peter M.
format Article
author Green, James E.
Loh, Wei Sun.
Marshall, Andrew R. J.
Ng, Beng Koon
Tozer, Richard C.
David, John P. R.
Soloviev, Stanislav I.
Sandvik, Peter M.
author_sort Green, James E.
title Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
title_short Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
title_full Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
title_fullStr Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
title_full_unstemmed Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement
title_sort impact ionization coefficients in 4h-sic by ultralow excess noise measurement
publishDate 2013
url https://hdl.handle.net/10356/84793
http://hdl.handle.net/10220/13475
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