Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement

• المؤلفون الرئيسيون: Green, James E., Loh, Wei Sun., Marshall, Andrew R. J., Ng, Beng Koon, Tozer, Richard C., David, John P. R., Soloviev, Stanislav I., Sandvik, Peter M.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84793; http://hdl.handle.net/10220/13475
• المؤسسة: Nanyang Technological University

Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure in...