Novel RF process monitoring test structure for silicon devices

• Main Authors: Sia, Choon Beng, Ong, Beng Hwee, Lim, Kok Meng, Yeo, Kiat Seng, Do, Manh Anh, Ma, Jianguo, Alam, Tariq
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Online Access: https://hdl.handle.net/10356/84919; http://hdl.handle.net/10220/5990
• Institution: Nanyang Technological University

This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitance...