Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths

• المؤلفون الرئيسيون: Ong, Vincent K. S., Kurniawan, Oka.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/84920; http://hdl.handle.net/10220/4658
• المؤسسة: Nanyang Technological University

Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most use...