Enhancement of thermal robustness in magnetic tunnel junctions with perpendicular magnetic anisotropy
Spin transfer torque magnetoresistive random access memory (STT-MRAM) has been recognized to be the most promising non-volatile memory technology for future technology nodes. STT-MRAM utilizes an array of magnetic tunnel junctions (MTJ) as its storage elements, which in its rudimentary form consi...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2019
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| 在線閱讀: | https://hdl.handle.net/10356/85158 http://hdl.handle.net/10220/50350 |
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| 機構: | Nanyang Technological University |
| 語言: | English |