Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

• Main Authors: Ong, B. S., Pey, Kin Leong, Ong, C. Y., Tan, Chuan Seng, Antoniadis, D. A., Fitzgerald, E. A.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Ozone; Chemical vapor deposition
• Online Access: https://hdl.handle.net/10356/86528; http://hdl.handle.net/10220/44100
• Institution: Nanyang Technological University

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2WSi2 metal gate process for In0.53Ga0.47AsIn0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3Al2O3 shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.