InGaZnO thin-film transistors with coplanar control gates for single-device logic applications
Neuron thin-film transistors (TFTs) with coplanar control gates based on RF sputtering-deposited amorphous indium-gallium-zinc oxide (IGZO) layer are fabricated. Two coplanar control gates, capacitively coupled with the floating gate, can effectively control the neutron TFT. The drain current of the...
Saved in:
Main Authors: | , , , , , , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2018
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/86850 http://hdl.handle.net/10220/45205 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|