Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

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Bibliographic Details
Main Authors: Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., Gao, J.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2018
Subjects:
Photodetectors
DRNTU::Engineering::Electrical and electronic engineering
Photodiodes
Online Access:https://hdl.handle.net/10356/87692
http://hdl.handle.net/10220/46805
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Institution: Nanyang Technological University
Language: English
Description
Summary:An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

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