Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

• Main Authors: Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., Gao, J.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2018
• Subjects: Photodetectors; DRNTU::Engineering::Electrical and electronic engineering; Photodiodes
• Online Access: https://hdl.handle.net/10356/87692; http://hdl.handle.net/10220/46805
• Institution: Nanyang Technological University

An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.