Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

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Main Authors:	Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., Gao, J.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2018
Subjects:	Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes
Online Access:	https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-876922020-09-26T22:15:59Z Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. School of Electrical and Electronic Engineering Asia Communications and Photonics Conference 2014 Temasek Laboratories Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data. Published version 2018-12-04T09:25:17Z 2019-12-06T16:47:22Z 2018-12-04T09:25:17Z 2019-12-06T16:47:22Z 2014 Conference Paper Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., & Gao, J. (2014). Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure. Asia Communications and Photonics Conference 2014, ATh3A.22-. doi:10.1364/ACPC.2014.ATh3A.22 https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805 10.1364/ACPC.2014.ATh3A.22 en © 2014 The Author(s) Optical Society of America(OSA). This paper was published in Asia Communications and Photonics Conference 2014 and is made available as an electronic reprint (preprint) with permission of The Author(s) Optical Society of America(OSA). The published version is available at: [http://dx.doi.org/10.1364/ACPC.2014.ATh3A.22]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes
spellingShingle	Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
description	An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J.
format	Conference or Workshop Item
author	Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J.
author_sort	Meng, Q. Q.
title	Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_short	Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_full	Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_fullStr	Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_full_unstemmed	Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_sort	equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
publishDate	2018
url	https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805
_version_	1681058938759413760

Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

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